Simba semiconductor mutyairi wedunhu chikamu chakakosha cheseketi akabatanidzwa, ane simba, anoshandiswa kuIGBT mutyairi ICs mukuwedzera pakupa drive level uye yazvino, kazhinji nedhiraivha yekudzivirira mabasa, kusanganisira desaturation kupfupika kwedziviriro yedunhu, undervoltage shutdown, Miller clamp, maviri-stage shutdown. , soft shutdown, SRC (slew rate control), nezvimwewo Zvigadzirwa zvinewo zvakasiyana-siyana zvekushanda kwekudzivirira.Nekudaro, sedunhu rakasanganiswa, pasuru yayo inosarudza huwandu hwesimba rekushandisa, mutyairi IC kubuda ikozvino kunogona kupfuura 10A mune dzimwe nguva, asi zvakadaro haakwanise kuzadzisa zvinodiwa zvekutyaira zveazvino IGBT modules, bepa rino richakurukura IGBT kutyaira. kuwedzera ikozvino uye ikozvino.
Nzira yekuwedzera mutyairi ikozvino
Kana dhiraivha ikozvino inoda kuwedzerwa, kana kana uchityaira IGBTs ine yakakwira ikozvino uye yakakura gedhi capacitance, zvinodikanwa kuwedzera ikozvino kune mutyairi IC.
Kushandisa bipolar transistors
Iyo yakajairika dhizaini yeIGBT gedhi mutyairi ndeyekuziva kuwedzera kwazvino nekushandisa inopindirana emitter muteveri.Ikozvino yakabuda ye emitter follower transistor inotarirwa neDC kuwana kwe transistor hFE kana β uye hwaro hwazvino IB, kana ikozvino inodiwa kutyaira IGBT yakakura kupfuura IB * β, ipapo transistor ichapinda mumutsara wekushanda nzvimbo uye inobuda. dhiraivha ikozvino haina kukwana, ipapo yekuchaja uye yekuburitsa kumhanya kweIGBT capacitor inononoka uye iyo IGBT kurasikirwa kunowedzera.
Kushandisa MOSFETs
MOSFETs inogona zvakare kushandiswa pakuwedzera ikozvino kwemutyairi, dunhu rinowanzo kuumbwa nePMOS + NMOS, asi iyo logic level yedunhu redunhu inopesana neye transistor push-pull.Dhizaini yechubhu yekumusoro PMOS sosi yakabatana kune yakanaka magetsi ekupa, gedhi rakaderera pane kwakapihwa voltage PMOS pa, uye mutyairi IC kubuda kunowanzo kukwirisa level on, saka kushandiswa kwePMOS + NMOS chimiro. inogona kuda inverter mukugadzira.
Ne bipolar transistors kana MOSFETs?
(1) Kubudirira misiyano, kazhinji mu-high-simba maapplication, iyo yekuchinjisa frequency haina kunyanya kukwira, saka iyo conduction kurasikirwa ndiyo inonyanya kukosha, kana transistor ine mukana.Mazhinji emazuva ano emagetsi emagetsi emagetsi madhizaini, senge emagetsi mota mota, uko kupisa kupisa kwakaoma uye tembiricha yakakwira mukati mekesi yakavharirwa, kana kunyatsoita kwakakosha uye transistor maseketi anogona kusarudzwa.
(2) Kubuda kwebipolar transistor mhinduro ine kudonha kwevoltage kunokonzerwa neVCE(yakagara), magetsi ekupa anodiwa kuti akwidzwe kutsiva dhiraivha yeVCE (yakagara) kuti iwane drive voltage ye15V, nepo MOSFET mhinduro. inogona kupotsa njanji-kune-njanji kubuda.
(3) MOSFET inomira voltage, VGS chete inosvika 20V, inogona kunge iri dambudziko rinoda kutariswa kana uchishandisa magetsi akanaka uye asina kunaka.
(4) MOSFETs ine yakashata tembiricha coefficient yeRds(on), nepo bipolar transistors ine yakanaka tembiricha coefficient, uye maMOSFET ane dambudziko rekutiza rinopisa kana rakabatana zvakafanana.
(5) Kana uchityaira Si/SiC MOSFETs, kukurumidza kwekuchinja kwebipolar transistors kunowanzo kunonoka pane chinotyaira chinhu MOSFETs, iyo inofanirwa kutariswa kushandisa MOSFETs kuwedzera ikozvino.
(6) Kusimba kwechikamu chekuisa kuESD uye surge voltage, bipolar transistor PN junction ine mukana wakakura uchienzaniswa neMOS gedhi oxide.
Bipolar transistors uye MOSFET maitiro haana kufanana, zvekushandisa kana iwe unofanirwa kuzvisarudzira wega zvinoenderana nehurongwa hwekugadzira zvinodiwa.
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